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100mA / 50V Digital transistors (with built-in resistors)
DTC144GE / DTC144GUA / DTC144GKA
Applications Inverter, Interface, Driver Features 1)The built-in bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 2)Only the on / off conditions need to be set for operation, making the device design easy. 3)Higher mounting densities can be achieved. Structure NPN epitaxial planar silicon transistor (Resistor built-in type) Packaging specifications
Package Packaging type Code
Part No.
Dimensions (Unit : mm)
EMT3
(SC-75A)
1.6 0.3
(3)
0.7 0.55
0.8
(2) (1)
1.6
0.2 0.5 0.5
(1) GND (2) IN (3) OUT
0.2
0.15
1.0
Each lead has same dimensions
Abbreviated symbol : K26
UMT3

2.0 0.3
(3)
0.9 0.2 0.7
1.25
EMT3 UMT3 SMT3 Taping Taping Taping TL 3000 - - T106 3000 - -
SMT3

2.9 0.4
(3)
(2) (1)
2.1
0.1Min.
1.1 0.8
Basic ordering unit (pieces)
DTC144GE DTC144GUA DTC144GKA
T146 3000 - -
0.65 0.65 1.3
(1) GND (2) IN (3) OUT
0.15
Each lead has same dimensions
Abbreviated symbol : K26
Inner circuit
C
R
B
(2)
(1)
1.6 2.8
E
E : Emitter C : Collector B : Base
R=47k
(1) GND (2) IN (3) OUT
0.95 0.95 0.15 1.9
Each lead has same dimensions
Abbreviated symbol : K26
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power DTC144GE dissipation DTC144GUA / DTC144GKA Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 150 200 150 -55 to +150 Unit V V V mA mW C C
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c 2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.06 - Rev.C
0.3Min.
0.1Min.
DTC144GE / DTC144GUA / DTC144GKA
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R fT Min. 50 50 5 - 65 - 68 32.9 - Typ. - - - - - - - 47 250 Max. - - - 0.5 130 0.3 - 61.1 - Unit V V V A A V - k MHz IC=50A IC=1mA IE=160A VCB=50V VEB=4V IC=10mA, IB=0.5mA IC=5mA , VCE=5V - VCE=10V , IE= -5mA , f=100MHz Conditions
Data Sheet
Transition frequency Characteristics of built-in transistor
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c 2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.06 - Rev.C
Notice
Notes
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